Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto K.Iwamoto, Y.Nunoshige Y.Nunoshige, Y.Kamimuta Y.Kamimuta, A.Hirano A.Hirano, H.Ota H.Ota, T.Nabatame T.Nabatame, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal2008 Materials Research Society Spring Meeting (San Francisco,USA)
Publication statusPublished - 2008 Mar 24

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K.Iwamoto, K. I., Y.Nunoshige, Y. N., Y.Kamimuta, Y. K., A.Hirano, A. H., H.Ota, H. O., T.Nabatame, T. N., T.Ohishi, T. O., A.Toriumi, A. T., & Oishi, T. (2008). Oxygen vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate. 2008 Materials Research Society Spring Meeting (San Francisco,USA).