Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate

K.Iwamoto K.Iwamoto, Y.Nunoshige Y.Nunoshige, Y.Kamimuta Y.Kamimuta, A.Hirano A.Hirano, H.Ohta H.Ohta, T.Nabatame T.Nabatame, T.Ohishi T.Ohishi, A.Toriumi A.Toriumi, Tomoji Oishi

Research output: Contribution to journalArticle

Original languageEnglish
Journal2008 Materials Research Society Spring Meeting (San Francisco,USA)
Publication statusPublished - 2008 Mar 23

Cite this

Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate. / K.Iwamoto, K.Iwamoto; Y.Nunoshige, Y.Nunoshige; Y.Kamimuta, Y.Kamimuta; A.Hirano, A.Hirano; H.Ohta, H.Ohta; T.Nabatame, T.Nabatame; T.Ohishi, T.Ohishi; A.Toriumi, A.Toriumi; Oishi, Tomoji.

In: 2008 Materials Research Society Spring Meeting (San Francisco,USA), 23.03.2008.

Research output: Contribution to journalArticle

K.Iwamoto, KI, Y.Nunoshige, YN, Y.Kamimuta, YK, A.Hirano, AH, H.Ohta, HO, T.Nabatame, TN, T.Ohishi, TO, A.Toriumi, AT & Oishi, T 2008, 'Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate', 2008 Materials Research Society Spring Meeting (San Francisco,USA).
K.Iwamoto, K.Iwamoto ; Y.Nunoshige, Y.Nunoshige ; Y.Kamimuta, Y.Kamimuta ; A.Hirano, A.Hirano ; H.Ohta, H.Ohta ; T.Nabatame, T.Nabatame ; T.Ohishi, T.Ohishi ; A.Toriumi, A.Toriumi ; Oishi, Tomoji. / Oxygene Vacancy-induced dipole formation at high-k/SiO2 interface by the catalytic effect of Pt-gate. In: 2008 Materials Research Society Spring Meeting (San Francisco,USA). 2008.
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AU - K.Iwamoto, K.Iwamoto

AU - Y.Nunoshige, Y.Nunoshige

AU - Y.Kamimuta, Y.Kamimuta

AU - A.Hirano, A.Hirano

AU - H.Ohta, H.Ohta

AU - T.Nabatame, T.Nabatame

AU - T.Ohishi, T.Ohishi

AU - A.Toriumi, A.Toriumi

AU - Oishi, Tomoji

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M3 - Article

JO - 2008 Materials Research Society Spring Meeting (San Francisco,USA)

JF - 2008 Materials Research Society Spring Meeting (San Francisco,USA)

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