TY - JOUR
T1 - P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas
AU - Hirano, Makoto
AU - Oe, Kunishige
AU - Yanagawa, Fumihiko
PY - 1984/11
Y1 - 1984/11
N2 - P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.
AB - P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.
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U2 - 10.1143/JJAP.23.L868
DO - 10.1143/JJAP.23.L868
M3 - Article
AN - SCOPUS:0021519392
SN - 0021-4922
VL - 23
SP - 868
EP - 870
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11
ER -