P-channel aigaas/gaas heterostructure fets employing two-dimensional hole gas

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    P-channel A1GaAs/GaAs heterostructure FETs O-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS-mm-1and 46 mSmm-1with a gate length of 1 μm. Calculations indicate that transconductances of more than 100 mSmm-1at 300 K and more than 200 mSmm-1at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing/?-HFETs for complementary logic, workable even at room temperature.

    Original languageEnglish
    Pages (from-to)868-870
    Number of pages3
    JournalJapanese Journal of Applied Physics
    Volume23
    Issue number11
    DOIs
    Publication statusPublished - 1984 Nov

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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