p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS.

Makoto Hirano, Kunishige Oe, Fumihiko Yanagawa

Research output: Chapter in Book/Report/Conference proceedingChapter

11 Citations (Scopus)

Abstract

p-channel AlGaAs/GaAs heterostructure FETs (p-HFETs) employing two-dimensional hole gas (2DHG) were fabricated and their characteristics were measured at 300 and 77 K. The achieved extrinsic transconductances were respectively 16 mS multiplied by (times) mm** minus **1 and 46 mS multiplied by (times) mm** minus **1 with a gate length of 1 mu m. Calculations indicate that transconductances of more than 100 mS multiplied by (times) mm** minus **1 at 300 K and more than 200 mS multiplied by (times) mm** minus **1 at 77 K should be achievable in p-HFET devices. The above results demonstrate the possibility of employing p-HFETs for complementary logic, workable even at room temperature.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 2: Letters
Pages868-870
Number of pages3
Volume23
Edition11
Publication statusPublished - 1984 Nov
Externally publishedYes

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Field effect transistors
Heterojunctions
Transconductance
Gases
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hirano, M., Oe, K., & Yanagawa, F. (1984). p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS. In Japanese Journal of Applied Physics, Part 2: Letters (11 ed., Vol. 23, pp. 868-870)

p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS. / Hirano, Makoto; Oe, Kunishige; Yanagawa, Fumihiko.

Japanese Journal of Applied Physics, Part 2: Letters. Vol. 23 11. ed. 1984. p. 868-870.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hirano, M, Oe, K & Yanagawa, F 1984, p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS. in Japanese Journal of Applied Physics, Part 2: Letters. 11 edn, vol. 23, pp. 868-870.
Hirano M, Oe K, Yanagawa F. p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS. In Japanese Journal of Applied Physics, Part 2: Letters. 11 ed. Vol. 23. 1984. p. 868-870
Hirano, Makoto ; Oe, Kunishige ; Yanagawa, Fumihiko. / p-CHANNEL AlGaAs/GaAs HETEROSTRUCTURE FETs EMPLOYING TWO-DIMENSIONAL HOLE GAS. Japanese Journal of Applied Physics, Part 2: Letters. Vol. 23 11. ed. 1984. pp. 868-870
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