Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

H. Nishikawa, R. Nakamura, R. Tohmon, Y. Ohki, Y. Hama, Y. Sakurai, K. Nagasawa

Research output: Contribution to journalConference article

Abstract

High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.

Original languageEnglish
Pages (from-to)69-78
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1327
Publication statusPublished - 1990 Dec 1
EventProperties and Characteristics of Optical Glass II - San Diego, CA, USA
Duration: 1990 Jul 121990 Jul 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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