Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

Hiroyuki Nishikawa, R. Nakamura, R. Tohmon, Y. Ohki, Y. Hama, Y. Sakurai, K. Nagasawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsAlexander J.III. Marker
PublisherPubl by Int Soc for Optical Engineering
Pages69-78
Number of pages10
Volume1327
Publication statusPublished - 1990
Externally publishedYes
EventProperties and Characteristics of Optical Glass II - San Diego, CA, USA
Duration: 1990 Jul 121990 Jul 13

Other

OtherProperties and Characteristics of Optical Glass II
CitySan Diego, CA, USA
Period90/7/1290/7/13

Fingerprint

silica glass
Excimer lasers
Laser beam effects
Fused silica
excimer lasers
purity
irradiation
Oxygen
oxygen
Stoichiometry
stoichiometry
Silica
Irradiation
Annealing
Impurities
silicon dioxide
impurities
Defects
annealing
defects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Nishikawa, H., Nakamura, R., Tohmon, R., Ohki, Y., Hama, Y., Sakurai, Y., & Nagasawa, K. (1990). Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. In A. J. III. Marker (Ed.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1327, pp. 69-78). Publ by Int Soc for Optical Engineering.

Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. / Nishikawa, Hiroyuki; Nakamura, R.; Tohmon, R.; Ohki, Y.; Hama, Y.; Sakurai, Y.; Nagasawa, K.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Alexander J.III. Marker. Vol. 1327 Publ by Int Soc for Optical Engineering, 1990. p. 69-78.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishikawa, H, Nakamura, R, Tohmon, R, Ohki, Y, Hama, Y, Sakurai, Y & Nagasawa, K 1990, Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. in AJIII Marker (ed.), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1327, Publ by Int Soc for Optical Engineering, pp. 69-78, Properties and Characteristics of Optical Glass II, San Diego, CA, USA, 90/7/12.
Nishikawa H, Nakamura R, Tohmon R, Ohki Y, Hama Y, Sakurai Y et al. Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. In Marker AJIII, editor, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 1327. Publ by Int Soc for Optical Engineering. 1990. p. 69-78
Nishikawa, Hiroyuki ; Nakamura, R. ; Tohmon, R. ; Ohki, Y. ; Hama, Y. ; Sakurai, Y. ; Nagasawa, K. / Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses. Proceedings of SPIE - The International Society for Optical Engineering. editor / Alexander J.III. Marker. Vol. 1327 Publ by Int Soc for Optical Engineering, 1990. pp. 69-78
@inproceedings{16c0457bfe5d4849980807968b602c7b,
title = "Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses",
abstract = "High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.",
author = "Hiroyuki Nishikawa and R. Nakamura and R. Tohmon and Y. Ohki and Y. Hama and Y. Sakurai and K. Nagasawa",
year = "1990",
language = "English",
volume = "1327",
pages = "69--78",
editor = "Marker, {Alexander J.III.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",

}

TY - GEN

T1 - Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

AU - Nishikawa, Hiroyuki

AU - Nakamura, R.

AU - Tohmon, R.

AU - Ohki, Y.

AU - Hama, Y.

AU - Sakurai, Y.

AU - Nagasawa, K.

PY - 1990

Y1 - 1990

N2 - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

AB - High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 10 16/cm 3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O 2 - ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O 2 and H 2O.

UR - http://www.scopus.com/inward/record.url?scp=0025539363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025539363&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025539363

VL - 1327

SP - 69

EP - 78

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Marker, Alexander J.III.

PB - Publ by Int Soc for Optical Engineering

ER -