Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

G. Wang; T. Ogawa; K. Murase; K. Hori; T. Soga; B. Zhang; G. Zhao; H. Ishikawa; T. Egawa; T. Jimbo; M. Umeno

doi:10.1143/jjap.40.4781

Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The effects of PH₃/H₂ plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H₂ plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H₂ plasma. In addition, PH₃/H₂ plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p⁺-n junction structure grown on Si substrate.

Original language	English
Pages (from-to)	4781-4784
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	8
DOIs	https://doi.org/10.1143/jjap.40.4781
Publication status	Published - 2001 Aug
Externally published	Yes

Keywords

Defect passivation
GaAs solar cell on Si substrate
Plasma exposure
Quantum efficiency

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.40.4781

Cite this

Wang, G., Ogawa, T., Murase, K., Hori, K., Soga, T., Zhang, B., Zhao, G., Ishikawa, H., Egawa, T., Jimbo, T., & Umeno, M. (2001). Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(8), 4781-4784. https://doi.org/10.1143/jjap.40.4781

Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure. / Wang, G.; Ogawa, T.; Murase, K. et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 8, 08.2001, p. 4781-4784.

Research output: Contribution to journal › Article › peer-review

Wang, G, Ogawa, T, Murase, K, Hori, K, Soga, T, Zhang, B, Zhao, G, Ishikawa, H, Egawa, T, Jimbo, T & Umeno, M 2001, 'Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 8, pp. 4781-4784. https://doi.org/10.1143/jjap.40.4781

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title = "Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure",

abstract = "The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.",

keywords = "Defect passivation, GaAs solar cell on Si substrate, Plasma exposure, Quantum efficiency",

author = "G. Wang and T. Ogawa and K. Murase and K. Hori and T. Soga and B. Zhang and G. Zhao and H. Ishikawa and T. Egawa and T. Jimbo and M. Umeno",

year = "2001",

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AU - Wang, G.

AU - Ogawa, T.

AU - Murase, K.

AU - Hori, K.

AU - Soga, T.

AU - Zhang, B.

AU - Zhao, G.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

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AB - The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

KW - Defect passivation

KW - GaAs solar cell on Si substrate

KW - Plasma exposure

KW - Quantum efficiency

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Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

Abstract

Keywords

ASJC Scopus subject areas

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