Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, Hiroyasu Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

Original languageEnglish
Pages (from-to)4781-4784
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number8
Publication statusPublished - 2001 Aug
Externally publishedYes

Fingerprint

Surface defects
hydrogen plasma
surface defects
Passivation
phosphines
passivity
radio frequencies
Plasmas
Hydrogen
Epilayers
defects
Substrates
Atoms
Defects
Carrier lifetime
Induced currents
Electric current measurement
carrier lifetime
minority carriers
p-n junctions

Keywords

  • Defect passivation
  • GaAs solar cell on Si substrate
  • Plasma exposure
  • Quantum efficiency

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure. / Wang, G.; Ogawa, T.; Murase, K.; Hori, K.; Soga, T.; Zhang, B.; Zhao, G.; Ishikawa, Hiroyasu; Egawa, T.; Jimbo, T.; Umeno, M.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 8, 08.2001, p. 4781-4784.

Research output: Contribution to journalArticle

Wang, G. ; Ogawa, T. ; Murase, K. ; Hori, K. ; Soga, T. ; Zhang, B. ; Zhao, G. ; Ishikawa, Hiroyasu ; Egawa, T. ; Jimbo, T. ; Umeno, M. / Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 8. pp. 4781-4784.
@article{398452ee986546cc962d11f4630fe8f7,
title = "Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure",
abstract = "The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.",
keywords = "Defect passivation, GaAs solar cell on Si substrate, Plasma exposure, Quantum efficiency",
author = "G. Wang and T. Ogawa and K. Murase and K. Hori and T. Soga and B. Zhang and G. Zhao and Hiroyasu Ishikawa and T. Egawa and T. Jimbo and M. Umeno",
year = "2001",
month = "8",
language = "English",
volume = "40",
pages = "4781--4784",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8",

}

TY - JOUR

T1 - Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure

AU - Wang, G.

AU - Ogawa, T.

AU - Murase, K.

AU - Hori, K.

AU - Soga, T.

AU - Zhang, B.

AU - Zhao, G.

AU - Ishikawa, Hiroyasu

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2001/8

Y1 - 2001/8

N2 - The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

AB - The effects of PH3/H2 plasma exposure on GaAs grown on Si substrate (GaAs/Si) were investigated. It found that incorporation of P atoms in H2 plasma not only hydrogenated the defect-related recombination centers of GaAs/Si epilayer, but also phosphidized the surface region of GaAs/Si epilayer by forming a phosphidized layer. Electron beam-induced current measurement directly proved that the defect-related dark spot density was effectively reduced by adding P atoms into the pure H2 plasma. In addition, PH3/H2 plasma exposure greatly increased the minority carrier lifetime properties and decreased the saturation current of the GaAs p+-n junction structure grown on Si substrate.

KW - Defect passivation

KW - GaAs solar cell on Si substrate

KW - Plasma exposure

KW - Quantum efficiency

UR - http://www.scopus.com/inward/record.url?scp=17144461903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144461903&partnerID=8YFLogxK

M3 - Article

VL - 40

SP - 4781

EP - 4784

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8

ER -