Patch antenna coupled 0.2 THz TUNNETT oscillators

Sundararajan Balasekaran; Kazuomi Endo; Tadao Tanabe; Yutaka Oyama

doi:10.1016/j.sse.2010.07.006

Patch antenna coupled 0.2 THz TUNNETT oscillators

Sundararajan Balasekaran, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.

Original language	English
Pages (from-to)	1578-1581
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2010.07.006
Publication status	Published - 2010 Dec
Externally published	Yes

Keywords

Molecular layer epitaxy (MLE)
Patch antenna
Terahertz
TUNNETT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2010.07.006

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Cite this

Balasekaran, S., Endo, K., Tanabe, T., & Oyama, Y. (2010). Patch antenna coupled 0.2 THz TUNNETT oscillators. Solid-State Electronics, 54(12), 1578-1581. https://doi.org/10.1016/j.sse.2010.07.006

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author = "Sundararajan Balasekaran and Kazuomi Endo and Tadao Tanabe and Yutaka Oyama",

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AU - Balasekaran, Sundararajan

AU - Endo, Kazuomi

AU - Tanabe, Tadao

AU - Oyama, Yutaka

PY - 2010/12

Y1 - 2010/12

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KW - Terahertz

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