Patch antenna coupled 0.2 THz TUNNETT oscillators

Sundararajan Balasekaran; Kazuomi Endo; Tadao Tanabe; Yutaka Oyama

doi:10.1016/j.sse.2010.07.006

Patch antenna coupled 0.2 THz TUNNETT oscillators

Sundararajan Balasekaran, Kazuomi Endo, Tadao Tanabe, Yutaka Oyama

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.

Original language	English
Pages (from-to)	1578-1581
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2010.07.006
Publication status	Published - 2010 Dec
Externally published	Yes

Keywords

Molecular layer epitaxy (MLE)
Patch antenna
TUNNETT
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2010.07.006

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Cite this

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title = "Patch antenna coupled 0.2 THz TUNNETT oscillators",

abstract = "Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.",

keywords = "Molecular layer epitaxy (MLE), Patch antenna, TUNNETT, Terahertz",

author = "Sundararajan Balasekaran and Kazuomi Endo and Tadao Tanabe and Yutaka Oyama",

note = "Funding Information: This work was partially supported by Global COE program “Materials Integration (International Center of Education and Research), Tohoku University”, MEXT, Japan. We are grateful to Dr. P. Plotka of the Semiconductor Research Institute for fruitful discussions on antenna design and device processing and Mr. H. Makabe for help with fabrication process. We also wish to thank Prof. J. Nishizawa for his fruitful discussions on TUNNETT device principles.",

year = "2010",

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doi = "10.1016/j.sse.2010.07.006",

language = "English",

volume = "54",

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journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - Patch antenna coupled 0.2 THz TUNNETT oscillators

AU - Balasekaran, Sundararajan

AU - Endo, Kazuomi

AU - Tanabe, Tadao

AU - Oyama, Yutaka

N1 - Funding Information: This work was partially supported by Global COE program “Materials Integration (International Center of Education and Research), Tohoku University”, MEXT, Japan. We are grateful to Dr. P. Plotka of the Semiconductor Research Institute for fruitful discussions on antenna design and device processing and Mr. H. Makabe for help with fabrication process. We also wish to thank Prof. J. Nishizawa for his fruitful discussions on TUNNETT device principles.

PY - 2010/12

Y1 - 2010/12

N2 - Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.

AB - Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.

KW - Molecular layer epitaxy (MLE)

KW - Patch antenna

KW - TUNNETT

KW - Terahertz

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