Abstract
Tunnel injection transit-time diodes (TUNNETT) were fabricated with molecular layer epitaxy (MLE) and a 390 × 440 μm patch antenna was coupled with the GaAs TUNNETT diode for cavity-less sub-terahertz (THz) oscillators. The obtained sub-terahertz continuous wave (CW) was 177-197 GHz with a detected power of -35.3 dBm at 197 GHz under a bias current of 550 mA.
Original language | English |
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Pages (from-to) | 1578-1581 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 54 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2010 Dec |
Externally published | Yes |
Keywords
- Molecular layer epitaxy (MLE)
- Patch antenna
- TUNNETT
- Terahertz
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry