Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa, Kouichi Nakamura, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number1 PART A/B
Publication statusPublished - 1998 Jan 15
Externally publishedYes

Fingerprint

Schottky diodes
Diodes
Metallorganic chemical vapor deposition
coefficients
Current voltage characteristics
Sapphire
Electronic properties
metalorganic chemical vapor deposition
electric contacts
sapphire
temperature dependence
electric potential
Substrates
electronics
Temperature

Keywords

  • Barrier height
  • Effective Richardson coefficient
  • GaN
  • Schottky diode

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient. / Ishikawa, Hiroyasu; Nakamura, Kouichi; Egawa, Takashi; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 1 PART A/B, 15.01.1998.

Research output: Contribution to journalArticle

Ishikawa, Hiroyasu ; Nakamura, Kouichi ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi. / Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient. In: Japanese Journal of Applied Physics, Part 2: Letters. 1998 ; Vol. 37, No. 1 PART A/B.
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AU - Umeno, Masayoshi

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