Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa, Kouichi Nakamura, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

24 Citations (Scopus)


A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number1 PART A/B
Publication statusPublished - 1998 Jan 15
Externally publishedYes



  • Barrier height
  • Effective Richardson coefficient
  • GaN
  • Schottky diode

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this