Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa; Kouichi Nakamura; Takashi Egawa; Takashi Jimbo; Masayoshi Umeno

doi:10.1143/jjap.37.l7

Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa, Kouichi Nakamura, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm^-2 · K^-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm^-2 · K^-2.

Original language	English
Pages (from-to)	L7-L9
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	1 PART A/B
DOIs	https://doi.org/10.1143/jjap.37.l7
Publication status	Published - 1998 Jan 15
Externally published	Yes

Keywords

Barrier height
Effective Richardson coefficient
GaN
Schottky diode

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.37.l7

Cite this

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title = "Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient",

abstract = "A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.",

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author = "Hiroyasu Ishikawa and Kouichi Nakamura and Takashi Egawa and Takashi Jimbo and Masayoshi Umeno",

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T1 - Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

AU - Ishikawa, Hiroyasu

AU - Nakamura, Kouichi

AU - Egawa, Takashi

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

PY - 1998/1/15

Y1 - 1998/1/15

N2 - A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.

AB - A Schottky diode of high quality Si-doped GaN grown on the c-face of a sapphire substrate by metalorganic chemical vapor deposition was investigated. Using conventional lift-off techniques, Ti/Al and Pd were evaporated as ohmic and Schottky contacts, respectively. The Pd/GaN Schottky diode showed excellent electronic properties. From the temperature dependence of current-voltage characteristics, a barrier height and a measured effective Richardson coefficient were obtained as 1.53 eV and 23.2 A · cm-2 · K-2, respectively. The barrier height was much higher than reported values and the measured Richardson coefficient was almost equal to the calculated theoretical value of 26 A · cm-2 · K-2.

KW - Barrier height

KW - Effective Richardson coefficient

KW - GaN

KW - Schottky diode

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Abstract

Keywords

ASJC Scopus subject areas

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