Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient

Hiroyasu Ishikawa, Kouichi Nakamura, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Pd/GaN Schottky diode with a barrier height of 1.5 eV and a reasonably effective Richardson coefficient'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy