Performance and degradation in single grain-size pentacene thin-film transistors

Taiki Komoda, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Submicron channel-length pentacene thin-film transisors (TFTs) were fabricated by electron beam lithography and a lift-off process. It was found that pentacene TFTs operated in the submicron channel length, but an enhancement of the off-stage leakage current and a large hysteresis were observed. By further investigation, we found that the large hysteresis observed in the submicron channel length was due to the moisture in the air. We also found a non-moisture-related degradation, in addition to a moisture-related one, by a time-dependent degradation measurement. It is of great importance both to avoid the moisture invasion and to reduce charging sites in the channel for reliable pentacene TFTs.

Original languageEnglish
Pages (from-to)3662-3665
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
Publication statusPublished - 2003 Jun
Externally publishedYes

Fingerprint

Thin film transistors
transistors
Moisture
grain size
moisture
degradation
Degradation
Thin films
Hysteresis
thin films
Electron beam lithography
hysteresis
Leakage currents
charging
leakage
lithography
electron beams
Air
augmentation
air

Keywords

  • Charging
  • Degradation
  • Discharging
  • Hysteresis
  • Moisture
  • Pentacene
  • Short-channel effect
  • Submicron
  • TFT

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Performance and degradation in single grain-size pentacene thin-film transistors. / Komoda, Taiki; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 6 A, 06.2003, p. 3662-3665.

Research output: Contribution to journalArticle

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