Abstract
Submicron channel-length pentacene thin-film transisors (TFTs) were fabricated by electron beam lithography and a lift-off process. It was found that pentacene TFTs operated in the submicron channel length, but an enhancement of the off-stage leakage current and a large hysteresis were observed. By further investigation, we found that the large hysteresis observed in the submicron channel length was due to the moisture in the air. We also found a non-moisture-related degradation, in addition to a moisture-related one, by a time-dependent degradation measurement. It is of great importance both to avoid the moisture invasion and to reduce charging sites in the channel for reliable pentacene TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 3662-3665 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 42 |
| Issue number | 6 A |
| DOIs | |
| Publication status | Published - 2003 Jun |
| Externally published | Yes |
Keywords
- Charging
- Degradation
- Discharging
- Hysteresis
- Moisture
- Pentacene
- Short-channel effect
- Submicron
- TFT
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)