Performance and degradation in single grain-size pentacene thin-film transistors

Taiki Komoda, Koji Kita, Kentaro Kyuno, Akira Toriumi

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Submicron channel-length pentacene thin-film transisors (TFTs) were fabricated by electron beam lithography and a lift-off process. It was found that pentacene TFTs operated in the submicron channel length, but an enhancement of the off-stage leakage current and a large hysteresis were observed. By further investigation, we found that the large hysteresis observed in the submicron channel length was due to the moisture in the air. We also found a non-moisture-related degradation, in addition to a moisture-related one, by a time-dependent degradation measurement. It is of great importance both to avoid the moisture invasion and to reduce charging sites in the channel for reliable pentacene TFTs.

Original languageEnglish
Pages (from-to)3662-3665
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 A
DOIs
Publication statusPublished - 2003 Jun

Keywords

  • Charging
  • Degradation
  • Discharging
  • Hysteresis
  • Moisture
  • Pentacene
  • Short-channel effect
  • Submicron
  • TFT

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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