Performance of a p-channel heterojunction fet with P+ -GaAs selectively grown contact layers for GaAs complementary ICs

Naoki Furuhata, Masahiro Fujii, Shuji Asai, Tadashi Maeda, Yasuo Ohno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new p-channel heterojunction field-effect transistor (HJFET) for GaAs complementary ICs is proposed. The device is a doped-channel metal-insulator-semiconductor (MIS) structure with an i-AlGaAs barrier layer of high Al mole fraction to suppress gate forward leakage. Its source-drain regions are formed by p+ -GaAs layers selectively grown by metalorganic molecular beam epitaxy (MOMBE) to reduce parasitic resistance. The 0.5 μm HJFET exhibits a maximum transconductance of 40 mS mm-1, a gate leakage turn-on voltage of -1.2 V, a cut-off frequency of 6.8 GHz, and a maximum frequency of oscillation of 8.0 GHz. Its source resistance of 10 Ω mm is half of that for a device structure without selectively grown contact layers. Moreover, performances of GaAs complementary ICs, using this p-channel HJFET and a previously reported 0.5 μm n-channel HJFET, are estimated by SPICE. As a result, a propagation delay of 120 ps and a power dissipation of 0.08 μW MHz-1 gate-1 at a 1.0 V supply voltage are predicted.

Original languageEnglish
Pages (from-to)1049-1055
Number of pages7
JournalSolid-State Electronics
Volume42
Issue number6
Publication statusPublished - 1998 Jun
Externally publishedYes

Fingerprint

Field effect transistors
Heterojunctions
heterojunctions
field effect transistors
leakage
Cutoff frequency
Transconductance
Electric potential
electric potential
SPICE
MIS (semiconductors)
transconductance
barrier layers
Molecular beam epitaxy
aluminum gallium arsenides
Energy dissipation
molecular beam epitaxy
cut-off
dissipation
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Performance of a p-channel heterojunction fet with P+ -GaAs selectively grown contact layers for GaAs complementary ICs. / Furuhata, Naoki; Fujii, Masahiro; Asai, Shuji; Maeda, Tadashi; Ohno, Yasuo.

In: Solid-State Electronics, Vol. 42, No. 6, 06.1998, p. 1049-1055.

Research output: Contribution to journalArticle

Furuhata, Naoki ; Fujii, Masahiro ; Asai, Shuji ; Maeda, Tadashi ; Ohno, Yasuo. / Performance of a p-channel heterojunction fet with P+ -GaAs selectively grown contact layers for GaAs complementary ICs. In: Solid-State Electronics. 1998 ; Vol. 42, No. 6. pp. 1049-1055.
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