Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation

K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Journal35th IEEE Semiconductor Interface Specialists Conference (SISC)
Publication statusPublished - 2004 Dec 1

Cite this

@article{203d2fc7ab6d4a2b9d4d774a55ebc608,
title = "Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation",
author = "K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "12",
day = "1",
language = "English",
journal = "35th IEEE Semiconductor Interface Specialists Conference (SISC)",

}

TY - JOUR

T1 - Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/12/1

Y1 - 2004/12/1

M3 - Article

JO - 35th IEEE Semiconductor Interface Specialists Conference (SISC)

JF - 35th IEEE Semiconductor Interface Specialists Conference (SISC)

ER -