Original language | English |
---|---|
Journal | 35th IEEE Semiconductor Interface Specialists Conference (SISC) |
Publication status | Published - 2004 Dec 1 |
Cite this
Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation. / Kita, K.; Kyuno, K.; Toriumi, A.
In: 35th IEEE Semiconductor Interface Specialists Conference (SISC), 01.12.2004.Research output: Contribution to journal › Article
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title = "Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation",
author = "K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "12",
day = "1",
language = "English",
journal = "35th IEEE Semiconductor Interface Specialists Conference (SISC)",
}
TY - JOUR
T1 - Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation
AU - Kita, K.
AU - Kyuno, K.
AU - Toriumi, A.
PY - 2004/12/1
Y1 - 2004/12/1
M3 - Article
JO - 35th IEEE Semiconductor Interface Specialists Conference (SISC)
JF - 35th IEEE Semiconductor Interface Specialists Conference (SISC)
ER -