Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation

K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journal › Article

Original languageEnglish
Journal35th IEEE Semiconductor Interface Specialists Conference (SISC)
Publication statusPublished - 2004 Dec 1

Cite this

Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation. / Kita, K.; Kyuno, K.; Toriumi, A.

In: 35th IEEE Semiconductor Interface Specialists Conference (SISC), 01.12.2004.

Research output: Contribution to journal › Article

Kita, K, Kyuno, K & Toriumi, A 2004, 'Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation', 35th IEEE Semiconductor Interface Specialists Conference (SISC).
Kita K, Kyuno K, Toriumi A. Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation. 35th IEEE Semiconductor Interface Specialists Conference (SISC). 2004 Dec 1.
Kita, K. ; Kyuno, K. ; Toriumi, A. / Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation. In: 35th IEEE Semiconductor Interface Specialists Conference (SISC). 2004.
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