Phase separation into nano-crystalline nitrides in ternary Ti-Si-N system via N implantation

Shinji Muraishi, Tatsuhiko Aizawa

Research output: Contribution to journalArticle

Abstract

The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.

Original languageEnglish
Pages (from-to)3651-3654
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberV
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Nitrides
Phase separation
nitrides
implantation
Crystalline materials
X ray photoelectron spectroscopy
photoelectron spectroscopy
Depth profiling
Nitriding
Chemical shift
Amorphous films
Electron diffraction
nitriding
Ion beams
Sputtering
Heat treatment
chemical equilibrium
Transmission electron microscopy
heat treatment
x rays

Keywords

  • Ion Beam Sputtering
  • Ion implantation
  • Nano-structure
  • Phase separation
  • TEM
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Phase separation into nano-crystalline nitrides in ternary Ti-Si-N system via N implantation. / Muraishi, Shinji; Aizawa, Tatsuhiko.

In: Materials Science Forum, Vol. 475-479, No. V, 2005, p. 3651-3654.

Research output: Contribution to journalArticle

Muraishi, Shinji ; Aizawa, Tatsuhiko. / Phase separation into nano-crystalline nitrides in ternary Ti-Si-N system via N implantation. In: Materials Science Forum. 2005 ; Vol. 475-479, No. V. pp. 3651-3654.
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