Phase separation into nano-crystalline nitrides in ternary Ti-Si-N system via N implantation

Shinji Muraishi, Tatsuhiko Aizawa

Research output: Contribution to journalConference article

Abstract

The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.

Original languageEnglish
Pages (from-to)3651-3654
Number of pages4
JournalMaterials Science Forum
Volume475-479
Issue numberV
Publication statusPublished - 2005 Apr 25
EventPRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China
Duration: 2004 Nov 22004 Nov 5

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Keywords

  • Ion Beam Sputtering
  • Ion implantation
  • Nano-structure
  • Phase separation
  • TEM
  • XPS

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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