Photoemission study of electronic states in HgBa2CuO4+δ with various doping levels

H. Uchiyama, W. Z. Hu, Ayako Yamamoto, S. Tajima, K. Saiki, A. Koma

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The temperature and doping dependences of photoemission spectra of polycrystalline HgBa2CuO4+δ samples are investigated for several doping levels near the optimum (Tc=98 K). As doping increases, we observed a systematic shift of the core levels and an increase in the density of states at the Fermi level (EF). Nonlinear shifts of the core levels with doping and a remarkable doping-dependent suppression of the spectral intensity over more than 300 meV below EF are compatible with the reported results for La2-xSrxCuO4. With decreasing temperature, the density of states was gradually suppressed at energies lower than 30 meV, suggesting a gap opening. The estimated leading edge shift is about 10 meV for all samples at both 20 and 105 K.

Original languageEnglish
Pages (from-to)615-621
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number1
Publication statusPublished - 2000
Externally publishedYes

Fingerprint

Photoemission
Electronic states
photoelectric emission
Doping (additives)
electronics
Core levels
shift
leading edges
Fermi level
retarding
Temperature
temperature dependence
temperature
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Photoemission study of electronic states in HgBa2CuO4+δ with various doping levels. / Uchiyama, H.; Hu, W. Z.; Yamamoto, Ayako; Tajima, S.; Saiki, K.; Koma, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 1, 2000, p. 615-621.

Research output: Contribution to journalArticle

Uchiyama, H. ; Hu, W. Z. ; Yamamoto, Ayako ; Tajima, S. ; Saiki, K. ; Koma, A. / Photoemission study of electronic states in HgBa2CuO4+δ with various doping levels. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 62, No. 1. pp. 615-621.
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