Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki

Research output: Contribution to conferencePaper

Abstract

The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

Original languageEnglish
Pages59-62
Number of pages4
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
Duration: 1998 Sep 271998 Sep 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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    Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Seol, K. S., & Ohki, Y. (1998). Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films. 59-62. Paper presented at Proceedings of the 1998 International Symposium on Electrical Insulating Materials, Toyohashi, Jpn, .