Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films

Hiroyuki Nishikawa, H. Fukui, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Photoluminescence (PL) and electron-spin-resonance (ESR) studies were carried out on thermal SiO 2 films after B + or P + implantation. Two PL bands at 4.3 eV and 2.6 eV were observed. For the 4.3-eV bands, two PL excitation bands were observed at 5.0 eV and 7.4 eV. Based on the comparison with those observed in oxygen-deficient-type bulk SiO 2, the 4.3 eV and 2.6 eV PL bands are ascribed to oxygen vacancies induced by ion implantation. The decay of the 4.3-eV band in ion-implanted thermal SiO 2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetime. The ESR signal of the paramagnetic E′ centers in ion-implanted thermal SiO 2 films were found to be broadened by dipole-dipole interactions between the closely spaced defects. The PL and ESR results suggest that the oxygen vacancies induced by ion implantation in thermal SiO 2 films are perturbed by the local network structures.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages97-102
Number of pages6
Volume196-201
Editionpt 1
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

Other

OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
CitySendai, Jpn
Period95/7/2395/7/28

Fingerprint

Paramagnetic resonance
Photoluminescence
Ions
Defects
Oxygen vacancies
Ion implantation
Hot Temperature
Oxygen

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Takiyama, M., Ieki, A., & Ohki, Y. (1995). Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films In Materials Science Forum (pt 1 ed., Vol. 196-201, pp. 97-102). Trans Tech Publ.

Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films . / Nishikawa, Hiroyuki; Fukui, H.; Watanabe, E.; Ito, D.; Takiyama, M.; Ieki, A.; Ohki, Y.

Materials Science Forum. Vol. 196-201 pt 1. ed. Trans Tech Publ, 1995. p. 97-102.

Research output: Chapter in Book/Report/Conference proceedingChapter

Nishikawa, H, Fukui, H, Watanabe, E, Ito, D, Takiyama, M, Ieki, A & Ohki, Y 1995, Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films in Materials Science Forum. pt 1 edn, vol. 196-201, Trans Tech Publ, pp. 97-102, Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4), Sendai, Jpn, 95/7/23.
Nishikawa H, Fukui H, Watanabe E, Ito D, Takiyama M, Ieki A et al. Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films In Materials Science Forum. pt 1 ed. Vol. 196-201. Trans Tech Publ. 1995. p. 97-102
Nishikawa, Hiroyuki ; Fukui, H. ; Watanabe, E. ; Ito, D. ; Takiyama, M. ; Ieki, A. ; Ohki, Y. / Photoluminescence and electron-spin-resonance studies of defects in ion-implanted thermal SiO 2 films Materials Science Forum. Vol. 196-201 pt 1. ed. Trans Tech Publ, 1995. pp. 97-102
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