| Original language | English |
|---|---|
| Pages (from-to) | 97-102 |
| Journal | Materials Science Forum |
| Volume | 196-201 |
| Publication status | Published - 1995 Jan 1 |
Cite this
Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Takiyamal, M., Ieki, A., & Ohki, Y. (1995). Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films. Materials Science Forum, 196-201, 97-102.
Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films. / Nishikawa, H.; Fukui, H.; Watanabe, E.; Ito, D.; Takiyamal, M.; Ieki, A.; Ohki, Y.
In: Materials Science Forum, Vol. 196-201, 01.01.1995, p. 97-102.Research output: Contribution to journal › Article
Nishikawa, H, Fukui, H, Watanabe, E, Ito, D, Takiyamal, M, Ieki, A & Ohki, Y 1995, 'Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films', Materials Science Forum, vol. 196-201, pp. 97-102.
Nishikawa H, Fukui H, Watanabe E, Ito D, Takiyamal M, Ieki A et al. Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films. Materials Science Forum. 1995 Jan 1;196-201:97-102.
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title = "Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films",
author = "H. Nishikawa and H. Fukui and E. Watanabe and D. Ito and M. Takiyamal and A. Ieki and Y. Ohki",
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AU - Nishikawa, H.
AU - Fukui, H.
AU - Watanabe, E.
AU - Ito, D.
AU - Takiyamal, M.
AU - Ieki, A.
AU - Ohki, Y.
PY - 1995/1/1
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SP - 97
EP - 102
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
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