Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, M. Takiyamal, A. Ieki, Y. Ohki

Research output: Contribution to journalArticle

1 Citation (Scopus)
Original languageEnglish
Pages (from-to)97-102
JournalMaterials Science Forum
Volume196-201
Publication statusPublished - 1995 Jan 1

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Nishikawa, H., Fukui, H., Watanabe, E., Ito, D., Takiyamal, M., Ieki, A., & Ohki, Y. (1995). Photoluminescence and electron spin-resonance studies of defects in ion-implanted thermal SiO2 films. Materials Science Forum, 196-201, 97-102.