Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells

M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

Original languageEnglish
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-73
Number of pages2
ISBN (Electronic)0780378202
DOIs
Publication statusPublished - 2003 Jan 1
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Keywords

  • Gallium arsenide
  • MOCVD
  • Optical materials
  • Photoluminescence
  • Pulse measurements
  • Quantum well lasers
  • Space vector pulse width modulation
  • Surface emitting lasers
  • Threshold current
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Kawaguchi, M., Miyamoto, T., Kawakami, S., Saito, A., & Koyama, F. (2003). Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 72-73). [1239912] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239912