Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells

M. Kawaguchi, T. Miyamoto, S. Kawakami, Atsushi Saitoh, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-73
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

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Keywords

  • Gallium arsenide
  • MOCVD
  • Optical materials
  • Photoluminescence
  • Pulse measurements
  • Quantum well lasers
  • Space vector pulse width modulation
  • Surface emitting lasers
  • Threshold current
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kawaguchi, M., Miyamoto, T., Kawakami, S., Saitoh, A., & Koyama, F. (2003). Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 72-73). [1239912] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239912