Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells

M. Kawaguchi, T. Miyamoto, S. Kawakami, Atsushi Saitoh, F. Koyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

Original languageEnglish
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-73
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: 2003 Aug 252003 Aug 27

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period03/8/2503/8/27

Fingerprint

Semiconductor quantum wells
Photoluminescence
Metallorganic chemical vapor deposition
gallium arsenide

Keywords

  • Gallium arsenide
  • MOCVD
  • Optical materials
  • Photoluminescence
  • Pulse measurements
  • Quantum well lasers
  • Space vector pulse width modulation
  • Surface emitting lasers
  • Threshold current
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kawaguchi, M., Miyamoto, T., Kawakami, S., Saitoh, A., & Koyama, F. (2003). Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 72-73). [1239912] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239912

Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. / Kawaguchi, M.; Miyamoto, T.; Kawakami, S.; Saitoh, Atsushi; Koyama, F.

IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 72-73 1239912.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kawaguchi, M, Miyamoto, T, Kawakami, S, Saitoh, A & Koyama, F 2003, Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. in IEEE International Symposium on Compound Semiconductors, Proceedings. vol. 2003-January, 1239912, Institute of Electrical and Electronics Engineers Inc., pp. 72-73, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 03/8/25. https://doi.org/10.1109/ISCS.2003.1239912
Kawaguchi M, Miyamoto T, Kawakami S, Saitoh A, Koyama F. Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. In IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 72-73. 1239912 https://doi.org/10.1109/ISCS.2003.1239912
Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. ; Saitoh, Atsushi ; Koyama, F. / Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells. IEEE International Symposium on Compound Semiconductors, Proceedings. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 72-73
@inproceedings{1b96ee70cc2941639f6088d1b80f807d,
title = "Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells",
abstract = "We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.",
keywords = "Gallium arsenide, MOCVD, Optical materials, Photoluminescence, Pulse measurements, Quantum well lasers, Space vector pulse width modulation, Surface emitting lasers, Threshold current, Vertical cavity surface emitting lasers",
author = "M. Kawaguchi and T. Miyamoto and S. Kawakami and Atsushi Saitoh and F. Koyama",
year = "2003",
doi = "10.1109/ISCS.2003.1239912",
language = "English",
isbn = "0780378202",
volume = "2003-January",
pages = "72--73",
booktitle = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells

AU - Kawaguchi, M.

AU - Miyamoto, T.

AU - Kawakami, S.

AU - Saitoh, Atsushi

AU - Koyama, F.

PY - 2003

Y1 - 2003

N2 - We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

AB - We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.

KW - Gallium arsenide

KW - MOCVD

KW - Optical materials

KW - Photoluminescence

KW - Pulse measurements

KW - Quantum well lasers

KW - Space vector pulse width modulation

KW - Surface emitting lasers

KW - Threshold current

KW - Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=84901340657&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901340657&partnerID=8YFLogxK

U2 - 10.1109/ISCS.2003.1239912

DO - 10.1109/ISCS.2003.1239912

M3 - Conference contribution

SN - 0780378202

VL - 2003-January

SP - 72

EP - 73

BT - IEEE International Symposium on Compound Semiconductors, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -