Abstract
We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 2 B |
| Publication status | Published - 2004 Feb 15 |
| Externally published | Yes |
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Keywords
- GaInNAs
- Semiconductor laser
- Strain compensation
- VCSEL
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells. / Kawaguchi, Masao; Miyamoto, Tomoyuki; Saitoh, Atsushi; Koyama, Fumio.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 2 B, 15.02.2004.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells
AU - Kawaguchi, Masao
AU - Miyamoto, Tomoyuki
AU - Saitoh, Atsushi
AU - Koyama, Fumio
PY - 2004/2/15
Y1 - 2004/2/15
N2 - We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.
AB - We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.
KW - GaInNAs
KW - Semiconductor laser
KW - Strain compensation
KW - VCSEL
UR - http://www.scopus.com/inward/record.url?scp=2142717430&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2142717430&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2142717430
VL - 43
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2 B
ER -