Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

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Abstract

We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

Original languageEnglish
Pages (from-to)L267-L270
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number2 B
Publication statusPublished - 2004 Feb 15

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Keywords

  • GaInNAs
  • Semiconductor laser
  • Strain compensation
  • VCSEL

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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