Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Masao Kawaguchi; Tomoyuki Miyamoto; Atsushi Saitoh; Fumio Koyama

doi:10.1143/jjap.43.l267

Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

Original language	English
Pages (from-to)	L267-L270
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	2 B
DOIs	https://doi.org/10.1143/jjap.43.l267
Publication status	Published - 2004 Feb 15
Externally published	Yes

Keywords

GaInNAs
Semiconductor laser
Strain compensation
VCSEL

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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AU - Kawaguchi, Masao

AU - Miyamoto, Tomoyuki

AU - Saitoh, Atsushi

AU - Koyama, Fumio

PY - 2004/2/15

Y1 - 2004/2/15

N2 - We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

AB - We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

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KW - Semiconductor laser

KW - Strain compensation

KW - VCSEL

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Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Abstract

Keywords

ASJC Scopus subject areas

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