Abstract
We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.
| Original language | English |
|---|---|
| Pages (from-to) | L267-L270 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 43 |
| Issue number | 2 B |
| DOIs | |
| Publication status | Published - 2004 Feb 15 |
| Externally published | Yes |
Keywords
- GaInNAs
- Semiconductor laser
- Strain compensation
- VCSEL
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)