Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells

Masao Kawaguchi, Tomoyuki Miyamoto, Atsushi Saitoh, Fumio Koyama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on the photoluminescence (PL) and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells (QWs) as a function of the amount of strain-compensation. The PL intensity of GaInNAs/GaAs(P) QWs was increased by increasing both the thickness and phosphorous (P) content of GaAsP strain-compensation layers. It was also shown that strain compensation is beneficial for increasing of the number of GaInNAs QWs. The threshold current densities of lasers were improved by introducing strain compensation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number2 B
Publication statusPublished - 2004 Feb 15
Externally publishedYes

Fingerprint

Semiconductor quantum wells
lasing
Photoluminescence
quantum wells
photoluminescence
Threshold current density
threshold currents
current density
Compensation and Redress
Lasers
lasers

Keywords

  • GaInNAs
  • Semiconductor laser
  • Strain compensation
  • VCSEL

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence and Lasing Characteristics of GaInNAs/GaAsP Strain-Compensated Quantum Wells. / Kawaguchi, Masao; Miyamoto, Tomoyuki; Saitoh, Atsushi; Koyama, Fumio.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 2 B, 15.02.2004.

Research output: Contribution to journalArticle

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