Photoluminescence characterization of defects in thermal oxide

Hiroyuki Nishikawa, James H. Stathis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N 2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O 2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO 2 interface.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages289-294
Number of pages6
Volume592
Publication statusPublished - 2000
Externally publishedYes
EventStructure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 1

Other

OtherStructure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures
CityBoston, MA, USA
Period99/11/2999/12/1

Fingerprint

Oxides
Photoluminescence
Defects
Vacuum
Annealing
Hot Temperature
Decomposition
Oxidation
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nishikawa, H., & Stathis, J. H. (2000). Photoluminescence characterization of defects in thermal oxide. In Materials Research Society Symposium - Proceedings (Vol. 592, pp. 289-294). Materials Research Society.

Photoluminescence characterization of defects in thermal oxide. / Nishikawa, Hiroyuki; Stathis, James H.

Materials Research Society Symposium - Proceedings. Vol. 592 Materials Research Society, 2000. p. 289-294.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishikawa, H & Stathis, JH 2000, Photoluminescence characterization of defects in thermal oxide. in Materials Research Society Symposium - Proceedings. vol. 592, Materials Research Society, pp. 289-294, Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures, Boston, MA, USA, 99/11/29.
Nishikawa H, Stathis JH. Photoluminescence characterization of defects in thermal oxide. In Materials Research Society Symposium - Proceedings. Vol. 592. Materials Research Society. 2000. p. 289-294
Nishikawa, Hiroyuki ; Stathis, James H. / Photoluminescence characterization of defects in thermal oxide. Materials Research Society Symposium - Proceedings. Vol. 592 Materials Research Society, 2000. pp. 289-294
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