Photoluminescence characterization of defects in thermal oxide

Hiroyuki Nishikawa, James H. Stathis

Research output: Contribution to journalConference article

Abstract

Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.

Original languageEnglish
Pages (from-to)289-294
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume592
Publication statusPublished - 2000 Dec 1
EventStructure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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