Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

Hiroyuki Nishikawa, Taiji Shiroyama, Ryuta Nakamura, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

Research output: Contribution to journalArticle

388 Citations (Scopus)

Abstract

Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

Original languageEnglish
Pages (from-to)586-591
Number of pages6
JournalPhysical Review B
Volume45
Issue number2
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

silica glass
Fused silica
Silicon Dioxide
Photoluminescence
purity
Silica
photoluminescence
Defects
defects
Oxygen
silicon dioxide
excitation
Luminescence
oxygen
Laser excitation
Excimer lasers
luminescence
Stoichiometry
Absorption spectra
excimer lasers

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation. / Nishikawa, Hiroyuki; Shiroyama, Taiji; Nakamura, Ryuta; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa.

In: Physical Review B, Vol. 45, No. 2, 1992, p. 586-591.

Research output: Contribution to journalArticle

Nishikawa, Hiroyuki ; Shiroyama, Taiji ; Nakamura, Ryuta ; Ohki, Yoshimichi ; Nagasawa, Kaya ; Hama, Yoshimasa. / Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation. In: Physical Review B. 1992 ; Vol. 45, No. 2. pp. 586-591.
@article{36a3384451114d9ba6637d5147b84887,
title = "Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation",
abstract = "Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.",
author = "Hiroyuki Nishikawa and Taiji Shiroyama and Ryuta Nakamura and Yoshimichi Ohki and Kaya Nagasawa and Yoshimasa Hama",
year = "1992",
doi = "10.1103/PhysRevB.45.586",
language = "English",
volume = "45",
pages = "586--591",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

AU - Nishikawa, Hiroyuki

AU - Shiroyama, Taiji

AU - Nakamura, Ryuta

AU - Ohki, Yoshimichi

AU - Nagasawa, Kaya

AU - Hama, Yoshimasa

PY - 1992

Y1 - 1992

N2 - Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

AB - Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

UR - http://www.scopus.com/inward/record.url?scp=0000971016&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000971016&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.45.586

DO - 10.1103/PhysRevB.45.586

M3 - Article

AN - SCOPUS:0000971016

VL - 45

SP - 586

EP - 591

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 2

ER -