Photoluminescence study of defect in ion-implanted thermal SiO2 films

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A.Ieki A.Ieki, Y. Ohki

Research output: Contribution to journalArticle

78 Citations (Scopus)
Original languageEnglish
Pages (from-to)842-846
JournalDefault journal
Volume78
Publication statusPublished - 1995 Jul 1

Cite this

Nishikawa, H., Watanabe, E., Ito, D., Takiyama, M., A.Ieki, A. I., & Ohki, Y. (1995). Photoluminescence study of defect in ion-implanted thermal SiO2 films. Default journal, 78, 842-846.

Photoluminescence study of defect in ion-implanted thermal SiO2 films. / Nishikawa, H.; Watanabe, E.; Ito, D.; Takiyama, M.; A.Ieki, A.Ieki; Ohki, Y.

In: Default journal, Vol. 78, 01.07.1995, p. 842-846.

Research output: Contribution to journalArticle

Nishikawa, H, Watanabe, E, Ito, D, Takiyama, M, A.Ieki, AI & Ohki, Y 1995, 'Photoluminescence study of defect in ion-implanted thermal SiO2 films', Default journal, vol. 78, pp. 842-846.
Nishikawa H, Watanabe E, Ito D, Takiyama M, A.Ieki AI, Ohki Y. Photoluminescence study of defect in ion-implanted thermal SiO2 films. Default journal. 1995 Jul 1;78:842-846.
Nishikawa, H. ; Watanabe, E. ; Ito, D. ; Takiyama, M. ; A.Ieki, A.Ieki ; Ohki, Y. / Photoluminescence study of defect in ion-implanted thermal SiO2 films. In: Default journal. 1995 ; Vol. 78. pp. 842-846.
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