Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)