Photoluminescence study of defects in ion-implanted thermal SiO2 films

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Makoto Takiyama, Akihito Ieki, Yoshimichi Ohki

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.

Original languageEnglish
Pages (from-to)842-846
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number2
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

Fingerprint

ion implantation
photoluminescence
defects
oxygen
ions
probes
decay
thin films
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence study of defects in ion-implanted thermal SiO2 films. / Nishikawa, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Takiyama, Makoto; Ieki, Akihito; Ohki, Yoshimichi.

In: Journal of Applied Physics, Vol. 78, No. 2, 01.01.1995, p. 842-846.

Research output: Contribution to journalArticle

Nishikawa, H, Watanabe, E, Ito, D, Takiyama, M, Ieki, A & Ohki, Y 1995, 'Photoluminescence study of defects in ion-implanted thermal SiO2 films', Journal of Applied Physics, vol. 78, no. 2, pp. 842-846. https://doi.org/10.1063/1.360274
Nishikawa, Hiroyuki ; Watanabe, Eiki ; Ito, Daisuke ; Takiyama, Makoto ; Ieki, Akihito ; Ohki, Yoshimichi. / Photoluminescence study of defects in ion-implanted thermal SiO2 films. In: Journal of Applied Physics. 1995 ; Vol. 78, No. 2. pp. 842-846.
@article{2bc67d9e6d024438ae230b2af2971c3f,
title = "Photoluminescence study of defects in ion-implanted thermal SiO2 films",
abstract = "Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.",
author = "Hiroyuki Nishikawa and Eiki Watanabe and Daisuke Ito and Makoto Takiyama and Akihito Ieki and Yoshimichi Ohki",
year = "1995",
month = "1",
day = "1",
doi = "10.1063/1.360274",
language = "English",
volume = "78",
pages = "842--846",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Photoluminescence study of defects in ion-implanted thermal SiO2 films

AU - Nishikawa, Hiroyuki

AU - Watanabe, Eiki

AU - Ito, Daisuke

AU - Takiyama, Makoto

AU - Ieki, Akihito

AU - Ohki, Yoshimichi

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.

AB - Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.

UR - http://www.scopus.com/inward/record.url?scp=0029346366&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029346366&partnerID=8YFLogxK

U2 - 10.1063/1.360274

DO - 10.1063/1.360274

M3 - Article

AN - SCOPUS:0029346366

VL - 78

SP - 842

EP - 846

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -