Photoluminescence study of defects in ion-implanted thermal SiO2 films

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Makoto Takiyama, Akihito Ieki, Yoshimichi Ohki

Research output: Contribution to journalArticle

79 Citations (Scopus)


Through the photoluminescence, (PL) measurements, III-D in B- and P- implanted thermal SiO2 has been studied. The 4.3 and 2.6 eV bands can be ascribed to the singlet-singlet and triplet singlet transitions, respectively, at the site of oxygen - deficient - type defects induced by the ion implantation. The present study has demonstrated that the PL decay profile of oxygen-deficient-type defects induced by ion implantation can be a useful probe for the local network structures of thin film SiO2.

Original languageEnglish
Pages (from-to)842-846
Number of pages5
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 1995 Jan 1
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this