Photoluminescence study of defects in ion-implanted thermal SiO2 films

Hiroyuki Nishikawa; Eiki Watanabe; Daisuke Ito; Makoto Takiyama; Akihito Ieki; Yoshimichi Ohki

doi:10.1063/1.360274

Photoluminescence study of defects in ion-implanted thermal SiO₂ films

Hiroyuki Nishikawa, Eiki Watanabe, Daisuke Ito, Makoto Takiyama, Akihito Ieki, Yoshimichi Ohki

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO₂ films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO₂ decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO₂ films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO₂ films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.

Original language	English
Pages (from-to)	842-846
Number of pages	5
Journal	Journal of Applied Physics
Volume	78
Issue number	2
DOIs	https://doi.org/10.1063/1.360274
Publication status	Published - 1995 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Photoluminescence study of defects in ion-implanted thermal SiO2 films",

abstract = "Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.",

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AU - Nishikawa, Hiroyuki

AU - Watanabe, Eiki

AU - Ito, Daisuke

AU - Takiyama, Makoto

AU - Ieki, Akihito

AU - Ohki, Yoshimichi

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.

AB - Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.

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Photoluminescence study of defects in ion-implanted thermal SiO₂ films

Abstract

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