Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Contribution to journalArticle

36 Citations (Scopus)
Original languageEnglish
Pages (from-to)412-416
JournalJournal of Applied Physics
Volume79
Publication statusPublished - 1996 Jan 1

Cite this

Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen. / Seol, K. S.; Ieki, A.; Ohki, Y.; Nishikawa, H.; Tachimori, M.

In: Journal of Applied Physics, Vol. 79, 01.01.1996, p. 412-416.

Research output: Contribution to journalArticle

@article{72ca9f01f69345cf8a41ee6ef28e6dc3,
title = "Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen",
author = "Seol, {K. S.} and A. Ieki and Y. Ohki and H. Nishikawa and M. Tachimori",
year = "1996",
month = "1",
day = "1",
language = "English",
volume = "79",
pages = "412--416",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

AU - Seol, K. S.

AU - Ieki, A.

AU - Ohki, Y.

AU - Nishikawa, H.

AU - Tachimori, M.

PY - 1996/1/1

Y1 - 1996/1/1

M3 - Article

VL - 79

SP - 412

EP - 416

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -