Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Contribution to journalArticle

37 Citations (Scopus)
Original languageEnglish
Pages (from-to)412-416
JournalJournal of Applied Physics
Volume79
Publication statusPublished - 1996 Jan 1

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