Photoluminescence study on point defects in SIMOX buried SiO 2 film

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Defects in buried SiO 2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages1909-1914
Number of pages6
Volume196-201
Editionpt 4
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

Other

OtherProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4)
CitySendai, Jpn
Period95/7/2395/7/28

Fingerprint

Point defects
Photoluminescence
Oxygen
Excimer lasers
Oxygen vacancies
Fused silica
Synchrotron radiation
Ion implantation
Ions
Defects

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Tachimori, M. (1995). Photoluminescence study on point defects in SIMOX buried SiO 2 film In Materials Science Forum (pt 4 ed., Vol. 196-201, pp. 1909-1914). Trans Tech Publ.

Photoluminescence study on point defects in SIMOX buried SiO 2 film . / Seol, K. S.; Ieki, A.; Ohki, Y.; Nishikawa, H.; Tachimori, M.

Materials Science Forum. Vol. 196-201 pt 4. ed. Trans Tech Publ, 1995. p. 1909-1914.

Research output: Chapter in Book/Report/Conference proceedingChapter

Seol, KS, Ieki, A, Ohki, Y, Nishikawa, H & Tachimori, M 1995, Photoluminescence study on point defects in SIMOX buried SiO 2 film in Materials Science Forum. pt 4 edn, vol. 196-201, Trans Tech Publ, pp. 1909-1914, Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4), Sendai, Jpn, 95/7/23.
Seol KS, Ieki A, Ohki Y, Nishikawa H, Tachimori M. Photoluminescence study on point defects in SIMOX buried SiO 2 film In Materials Science Forum. pt 4 ed. Vol. 196-201. Trans Tech Publ. 1995. p. 1909-1914
Seol, K. S. ; Ieki, A. ; Ohki, Y. ; Nishikawa, H. ; Tachimori, M. / Photoluminescence study on point defects in SIMOX buried SiO 2 film Materials Science Forum. Vol. 196-201 pt 4. ed. Trans Tech Publ, 1995. pp. 1909-1914
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