Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film

K. S.Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1909-1914
JournalMaterials Science Forum
Volume196-201
Publication statusPublished - 1995 Jan 1

Cite this

S.Seol, K., Ieki, A., Ohki, Y., Nishikawa, H., & Tachimori, M. (1995). Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film. Materials Science Forum, 196-201, 1909-1914.

Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film. / S.Seol, K.; Ieki, A.; Ohki, Y.; Nishikawa, H.; Tachimori, M.

In: Materials Science Forum, Vol. 196-201, 01.01.1995, p. 1909-1914.

Research output: Contribution to journalArticle

S.Seol, K, Ieki, A, Ohki, Y, Nishikawa, H & Tachimori, M 1995, 'Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film', Materials Science Forum, vol. 196-201, pp. 1909-1914.
S.Seol K, Ieki A, Ohki Y, Nishikawa H, Tachimori M. Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film. Materials Science Forum. 1995 Jan 1;196-201:1909-1914.
S.Seol, K. ; Ieki, A. ; Ohki, Y. ; Nishikawa, H. ; Tachimori, M. / Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film. In: Materials Science Forum. 1995 ; Vol. 196-201. pp. 1909-1914.
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