Physical mechanism of buffer-related lag and current collapse in GaN-based FETs and their reduction by introducing a field plate

Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs and GaN MESFETs is performed, considering a deep donor and a deep acceptor in the semi-insulating GaN buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of a field plate affects buffer-related drain lag, gate lag and current collapse. It is shown that in both FETs, the drain lag is reduced by introducing a field plate, because electron injection into the buffer layer is weakened by it, and trapping effects are reduced. It is also shown that the buffer-related current collapse and gate lag are reduced in the field-plate structures. The dependence on SiN passivation layer thickness under the field plate is also studied, suggesting that there is an optimum thickness of the SiN layer to minimize buffer-related current collapse and drain lag in GaN HEMTs and MESFETs.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
Pages722-726
Number of pages5
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC
Duration: 2009 Apr 262009 Apr 30

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CityMontreal, QC
Period09/4/2609/4/30

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Keywords

  • Current collapse
  • Device simulation
  • Field plate
  • GaN
  • HEMT
  • Trap

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nakajima, A., Itagaki, K., & Horio, K. (2009). Physical mechanism of buffer-related lag and current collapse in GaN-based FETs and their reduction by introducing a field plate. In IEEE International Reliability Physics Symposium Proceedings (pp. 722-726). [5173337] https://doi.org/10.1109/IRPS.2009.5173337