Abstract
Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
| Original language | English |
|---|---|
| Title of host publication | Annual Proceedings - Reliability Physics (Symposium) |
| Publisher | IEEE |
| Pages | 212-216 |
| Number of pages | 5 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6 |
Other
| Other | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings |
|---|---|
| City | Las Vegas, NV, USA |
| Period | 95/4/4 → 95/4/6 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
Cite this
Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. / Horio, Kazushige; Usami, K.; Satoh, K.
Annual Proceedings - Reliability Physics (Symposium). IEEE, 1995. p. 212-216.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs
AU - Horio, Kazushige
AU - Usami, K.
AU - Satoh, K.
PY - 1995
Y1 - 1995
N2 - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
AB - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
UR - http://www.scopus.com/inward/record.url?scp=0029223661&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029223661&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029223661
SP - 212
EP - 216
BT - Annual Proceedings - Reliability Physics (Symposium)
PB - IEEE
ER -