Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

K. Horio; K. Usami; K. Satoh

doi:10.1109/relphy.1995.513681

Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

K. Horio, K. Usami, K. Satoh

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

Original language	English
Pages (from-to)	212-216
Number of pages	5
Journal	Annual Proceedings - Reliability Physics (Symposium)
DOIs	https://doi.org/10.1109/relphy.1995.513681
Publication status	Published - 1995
Event	Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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10.1109/relphy.1995.513681

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title = "Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs",

abstract = "Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.",

author = "K. Horio and K. Usami and K. Satoh",

year = "1995",

doi = "10.1109/relphy.1995.513681",

language = "English",

pages = "212--216",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings ; Conference date: 04-04-1995 Through 06-04-1995",

}

TY - JOUR

T1 - Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

AU - Horio, K.

AU - Usami, K.

AU - Satoh, K.

PY - 1995

Y1 - 1995

N2 - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

AB - Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

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U2 - 10.1109/relphy.1995.513681

DO - 10.1109/relphy.1995.513681

M3 - Conference article

AN - SCOPUS:0029223661

SP - 212

EP - 216

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

SN - 0099-9512

T2 - Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings

Y2 - 4 April 1995 through 6 April 1995

ER -