Abstract
Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
Original language | English |
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Pages (from-to) | 212-216 |
Number of pages | 5 |
Journal | Annual Proceedings - Reliability Physics (Symposium) |
DOIs | |
Publication status | Published - 1995 |
Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality