Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

Kazushige Horio, K. Usami, K. Satoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages212-216
Number of pages5
Publication statusPublished - 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 1995 Apr 41995 Apr 6

Other

OtherProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings
CityLas Vegas, NV, USA
Period95/4/495/4/6

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Impact ionization
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Horio, K., Usami, K., & Satoh, K. (1995). Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. In Annual Proceedings - Reliability Physics (Symposium) (pp. 212-216). IEEE.

Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. / Horio, Kazushige; Usami, K.; Satoh, K.

Annual Proceedings - Reliability Physics (Symposium). IEEE, 1995. p. 212-216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horio, K, Usami, K & Satoh, K 1995, Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. in Annual Proceedings - Reliability Physics (Symposium). IEEE, pp. 212-216, Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings, Las Vegas, NV, USA, 95/4/4.
Horio K, Usami K, Satoh K. Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. In Annual Proceedings - Reliability Physics (Symposium). IEEE. 1995. p. 212-216
Horio, Kazushige ; Usami, K. ; Satoh, K. / Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. Annual Proceedings - Reliability Physics (Symposium). IEEE, 1995. pp. 212-216
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