Abstract
Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.
| Original language | English |
|---|---|
| Pages (from-to) | 212-216 |
| Number of pages | 5 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| DOIs | |
| Publication status | Published - 1995 |
| Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: 1995 Apr 4 → 1995 Apr 6 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
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Cite this
Horio, K., Usami, K., & Satoh, K. (1995). Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs. Annual Proceedings - Reliability Physics (Symposium), 212-216. https://doi.org/10.1109/relphy.1995.513681