Physical mechanism of performance instabilities such as kink phenomena and related backgating effect in GaAs MESFETs

K. Horio, K. Usami, K. Satoh

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Kink phenomena in GaAs MESFETs are studied by self-consistent 2-D simulation. The kinks are explained by impact ionization of holes and the following hole trapping (or hole accumulation) in the substrate rather than by direct gate breakdown. The kink-related backgating effect is also reproduced by our simulation, which is qualitatively consistent with a recent experimental finding.

Original languageEnglish
Pages (from-to)212-216
Number of pages5
JournalAnnual Proceedings - Reliability Physics (Symposium)
Publication statusPublished - 1995 Jan 1
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 1995 Apr 41995 Apr 6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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