Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages189-193
Number of pages5
Volume2002-January
ISBN (Print)0780373529
DOIs
Publication statusPublished - 2002
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 2002 Apr 72002 Apr 11

Other

Other40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period02/4/702/4/11

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Keywords

  • Energy states
  • Gallium arsenide
  • HEMTs
  • Impact ionization
  • MESFETs
  • MODFETs
  • Pulse circuits
  • Structural engineering
  • Transient analysis
  • Voltage

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mitani, Y., Wakabayashi, A., & Horio, K. (2002). Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2002-January, pp. 189-193). [996634] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2002.996634