Physical properties of Bi4Ti3O12 films grown on Si(100) wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550 °C. However, these films did not exhibit ferroelectricity, and the dielectric constant εr and dissipation factor tan δ were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21 kV/cm.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
Place of PublicationMinato-ku, Japan
PublisherJJAP
Pages5116-5119
Number of pages4
Volume34
Edition9 B
Publication statusPublished - 1995 Sep
EventProceedings of the 12th Meeting on Ferroelectric Materials and Their Applications (FMA-12) - Kyoto, Jpn
Duration: 1995 May 241995 May 27

Other

OtherProceedings of the 12th Meeting on Ferroelectric Materials and Their Applications (FMA-12)
CityKyoto, Jpn
Period95/5/2495/5/27

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamaguchi, M., Nagatomo, T., & Omoto, O. (1995). Physical properties of Bi4Ti3O12 films grown on Si(100) wafers. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 B ed., Vol. 34, pp. 5116-5119). JJAP.