Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures

Masaki Yamaguchi, T. Nagatomo, Y. Masuda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation. Thickness of Bi4Ti3O12 and Bi2SiO5 layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10-9 A cm-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi4Ti3O12 thin films are greatly dependent on the existence of a Bi4SiO5 layer. Therefore, we consider that the Bi4Ti3O12 thin film characteristics may be improved by Bi2SiO5 buffer layer.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
EditorsG. White, T. Tsurumi
Pages231-234
Number of pages4
Publication statusPublished - 2002
EventProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara
Duration: 2002 May 282002 Jun 1

Other

OtherProceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics
CityNara
Period02/5/2802/6/1

Fingerprint

Physical properties
Metals
Buffer layers
Bismuth
Decomposition
Thin films
Silicates
Silicon
Leakage currents
Ferroelectric materials
Surface morphology
Current density
Semiconductor materials
Electric potential
Substrates
bismuth titanate

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Yamaguchi, M., Nagatomo, T., & Masuda, Y. (2002). Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures. In G. White, & T. Tsurumi (Eds.), IEEE International Symposium on Applications of Ferroelectrics (pp. 231-234)

Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures. / Yamaguchi, Masaki; Nagatomo, T.; Masuda, Y.

IEEE International Symposium on Applications of Ferroelectrics. ed. / G. White; T. Tsurumi. 2002. p. 231-234.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, M, Nagatomo, T & Masuda, Y 2002, Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures. in G White & T Tsurumi (eds), IEEE International Symposium on Applications of Ferroelectrics. pp. 231-234, Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics, Nara, 02/5/28.
Yamaguchi M, Nagatomo T, Masuda Y. Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures. In White G, Tsurumi T, editors, IEEE International Symposium on Applications of Ferroelectrics. 2002. p. 231-234
Yamaguchi, Masaki ; Nagatomo, T. ; Masuda, Y. / Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures. IEEE International Symposium on Applications of Ferroelectrics. editor / G. White ; T. Tsurumi. 2002. pp. 231-234
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