Physics-based device simulation of lag and power compression in GaAs FETs

D. Kasai, Y. Kazami, Y. Mitani, K. Horio

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	235-238
Journal	Proceedings of the 11th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2003), Munich, Germany
Publication status	Published - 2003 Oct 6

Cite this

@article{815c17f1881543f59e375ea8ea74b480,

title = "Physics-based device simulation of lag and power compression in GaAs FETs",

author = "D. Kasai and Y. Kazami and Y. Mitani and K. Horio",

year = "2003",

month = oct,

day = "6",

language = "English",

pages = "235--238",

journal = "Proceedings of the 11th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2003), Munich, Germany",

}

TY - JOUR

T1 - Physics-based device simulation of lag and power compression in GaAs FETs

AU - Kasai, D.

AU - Kazami, Y.

AU - Mitani, Y.

AU - Horio, K.

PY - 2003/10/6

Y1 - 2003/10/6

M3 - Article

SP - 235

EP - 238

JO - Proceedings of the 11th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2003), Munich, Germany

JF - Proceedings of the 11th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2003), Munich, Germany

ER -