Physics-based device simulation of lag and power compression in GaAs FETs

D. Kasai, Y. Kazami, Y. Mitani, K. Horio

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)235-238
JournalProceedings of the 11th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2003), Munich, Germany
Publication statusPublished - 2003 Oct 6

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