Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs

H. Onodera, A. Nakajima, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of gate field plate is effective in reducing buffer-related lag and current collapse when the acceptor density in the buffer layer is high. On the other hand, the introduction of backside electrode is effective in reducing drain lag and current collapse when the acceptor density in the buffer layer is relatively low, because the fixed potential at the backside electrode reduces electron injection into the buffer layer and the resulting trapping effects.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
Pages45-48
Number of pages4
Publication statusPublished - 2011
Event14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 - Manchester
Duration: 2011 Oct 102011 Oct 11

Other

Other14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011
CityManchester
Period11/10/1011/10/11

Fingerprint

High electron mobility transistors
Buffer layers
Physics
Electrodes
Gates (transistor)
Electron injection
Transient analysis

Keywords

  • AlGaN/GaN HEMT
  • current collapse
  • drain lag
  • trap
  • two-dimensional analysis

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Onodera, H., Nakajima, A., & Horio, K. (2011). Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs. In European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 (pp. 45-48). [6102761]

Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs. / Onodera, H.; Nakajima, A.; Horio, Kazushige.

European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011. 2011. p. 45-48 6102761.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onodera, H, Nakajima, A & Horio, K 2011, Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs. in European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011., 6102761, pp. 45-48, 14th European Microwave Week 2011: "Wave to the Future", EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011, Manchester, 11/10/10.
Onodera H, Nakajima A, Horio K. Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs. In European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011. 2011. p. 45-48. 6102761
Onodera, H. ; Nakajima, A. ; Horio, Kazushige. / Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs. European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011. 2011. pp. 45-48
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