Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors

Kazushige Horio, Ken Yonemoto, Hiroki Takayanagi, Hiroyuki Nakano

Research output: Contribution to journalReview articlepeer-review

84 Citations (Scopus)

Fingerprint Dive into the research topics of 'Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors'. Together they form a unique fingerprint.

Physics & Astronomy