Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Hiraku Onodera, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
Pages401-404
Number of pages4
Publication statusPublished - 2012
Event7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam
Duration: 2012 Oct 292012 Oct 30

Other

Other7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
CityAmsterdam
Period12/10/2912/10/30

Fingerprint

High electron mobility transistors
Electric breakdown
Physics
Impact ionization
Buffer layers
Leakage currents

Keywords

  • breakdown voltage
  • buffer leakage current
  • field plate
  • GaN
  • HEMT
  • impact ionization of carriers

ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Onodera, H., & Horio, K. (2012). Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 401-404). [6483821]

Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. / Onodera, Hiraku; Horio, Kazushige.

European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. p. 401-404 6483821.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onodera, H & Horio, K 2012, Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. in European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012., 6483821, pp. 401-404, 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012, Amsterdam, 12/10/29.
Onodera H, Horio K. Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. p. 401-404. 6483821
Onodera, Hiraku ; Horio, Kazushige. / Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. pp. 401-404
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