Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Hiraku Onodera, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2012
Subtitle of host publication"Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
Pages401-404
Number of pages4
Publication statusPublished - 2012 Dec 1
Event7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands
Duration: 2012 Oct 292012 Oct 30

Publication series

NameEuropean Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012

Conference

Conference7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
CountryNetherlands
CityAmsterdam
Period12/10/2912/10/30

Keywords

  • GaN
  • HEMT
  • breakdown voltage
  • buffer leakage current
  • field plate
  • impact ionization of carriers

ASJC Scopus subject areas

  • Hardware and Architecture

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  • Cite this

    Onodera, H., & Horio, K. (2012). Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 401-404). [6483821] (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).