Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

T. Tanaka, K. Itagaki, A. Nakajima, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages164-167
Number of pages4
Publication statusPublished - 2009
EventEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome
Duration: 2009 Sep 282009 Oct 2

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
CityRome
Period09/9/2809/10/2

Fingerprint

Field effect transistors
Surface states
Physics
Substrates

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Tanaka, T., Itagaki, K., Nakajima, A., & Horio, K. (2009). Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 (pp. 164-167). [5296293]

Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. / Tanaka, T.; Itagaki, K.; Nakajima, A.; Horio, Kazushige.

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167 5296293.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tanaka, T, Itagaki, K, Nakajima, A & Horio, K 2009, Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. in European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009., 5296293, pp. 164-167, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, 09/9/28.
Tanaka T, Itagaki K, Nakajima A, Horio K. Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167. 5296293
Tanaka, T. ; Itagaki, K. ; Nakajima, A. ; Horio, Kazushige. / Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. pp. 164-167
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