| Original language | English |
|---|---|
| Journal | The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010) |
| Publication status | Published - 2010 May 21 |
Cite this
PL and structural studies of GaInN MQWs grown on Si substrates. / Ishikawa, H.; Mori, N.
In: The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010), 21.05.2010.Research output: Contribution to journal › Article
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author = "H. Ishikawa and N. Mori",
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language = "English",
journal = "The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)",
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AU - Mori, N.
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M3 - Article
JO - The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)
JF - The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)
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