PL and structural studies of GaInN MQWs grown on Si substrates

H. Ishikawa, N. Mori

Research output: Contribution to journalArticle

Original languageEnglish
JournalThe 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)
Publication statusPublished - 2010 May 21

Cite this

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title = "PL and structural studies of GaInN MQWs grown on Si substrates",
author = "H. Ishikawa and N. Mori",
year = "2010",
month = "5",
day = "21",
language = "English",
journal = "The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)",

}

TY - JOUR

T1 - PL and structural studies of GaInN MQWs grown on Si substrates

AU - Ishikawa, H.

AU - Mori, N.

PY - 2010/5/21

Y1 - 2010/5/21

M3 - Article

JO - The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)

JF - The 8th International Symposium on Semiconductor Light Emitting Devices (Beijing, May 16-21, 2010)

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