Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire

Guolin Yu, Hiroyasu Ishikawa, Takashi Egawa, Tetsuo Soga, Junji Watanabe, Takashi Jimbo, Masayoshi Umeno

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The refractive indices n (E⊥c) and n (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n, n and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number8 PART A
Publication statusPublished - 1997 Aug 1
Externally publishedYes

Fingerprint

Optical anisotropy
Gallium nitride
Spectroscopic ellipsometry
gallium nitrides
Sapphire
ellipsometry
Refractive index
sapphire
Spectroscopy
refractivity
reflectance
anisotropy
Ellipsometry
spectroscopy
Permittivity
permittivity
Wavelength
Substrates
wavelengths

Keywords

  • GaN
  • Optical anisotropy
  • Refractive index
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire. / Yu, Guolin; Ishikawa, Hiroyasu; Egawa, Takashi; Soga, Tetsuo; Watanabe, Junji; Jimbo, Takashi; Umeno, Masayoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 8 PART A, 01.08.1997.

Research output: Contribution to journalArticle

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AU - Watanabe, Junji

AU - Jimbo, Takashi

AU - Umeno, Masayoshi

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N2 - The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.

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