Abstract
The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.
| Original language | English |
|---|---|
| Pages (from-to) | L1029-L1031 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 36 |
| Issue number | 8 PART A |
| Publication status | Published - 1997 Aug 1 |
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Keywords
- GaN
- Optical anisotropy
- Refractive index
- Spectroscopic ellipsometry
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Yu, G., Ishikawa, H., Egawa, T., Soga, T., Watanabe, J., Jimbo, T., & Umeno, M. (1997). Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire. Japanese Journal of Applied Physics, Part 2: Letters, 36(8 PART A), L1029-L1031.