Abstract
The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 36 |
| Issue number | 8 PART A |
| Publication status | Published - 1997 Aug 1 |
| Externally published | Yes |
Fingerprint
Keywords
- GaN
- Optical anisotropy
- Refractive index
- Spectroscopic ellipsometry
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire. / Yu, Guolin; Ishikawa, Hiroyasu; Egawa, Takashi; Soga, Tetsuo; Watanabe, Junji; Jimbo, Takashi; Umeno, Masayoshi.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 8 PART A, 01.08.1997.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire
AU - Yu, Guolin
AU - Ishikawa, Hiroyasu
AU - Egawa, Takashi
AU - Soga, Tetsuo
AU - Watanabe, Junji
AU - Jimbo, Takashi
AU - Umeno, Masayoshi
PY - 1997/8/1
Y1 - 1997/8/1
N2 - The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.
AB - The refractive indices n⊥ (E⊥c) and n∥ (E ∥ c) of the hexagonal GaN on sapphire substrates have been determined in the transparent region using the polarized reflection measurements. It is found that the difference in the refractive indices for E⊥c and E ∥ c is below 3% over the entire wavelength range measured, and ∈∞ the high-frequency dielectric constant, is 5.14 for E⊥c and 5.31 for E ∥ c. Ellipsometry angles, Δ and ψ, have been calculated using the results of n⊥, n∥ and the thickness of the film, and an excellent agreement has been obtained between the calculated results and ellipsometric measured data.
KW - GaN
KW - Optical anisotropy
KW - Refractive index
KW - Spectroscopic ellipsometry
UR - http://www.scopus.com/inward/record.url?scp=0031200689&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031200689&partnerID=8YFLogxK
M3 - Article
VL - 36
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 PART A
ER -