Position and size controlled fabrication of nano-metals and -semiconductors with fine focused electron beam

Kazuo Furuya, Kazutaka Mitsuishi, Masayuki Shimojo, Masaki Takeguchi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Nanofabrication with tine focused electron beam was reviewed, and position and size controlled fabrication of nano-metals and -semiconductors are demonstrated. The nanowire of GaAs was shown to have an about 3 nm in diameter. We have discovered that Si nanocrystals with 2 to 3 nm can be formed in SiO2 thin film under irradiation of an electron beam 4.108 C/m2 at 850K. An array of the Si nanocrystal dots was also fabricated using this method. Similarly, when decomposable gases such as W(CO)6 were introduced at the beam irradiated areas, nano-metal islands are formed depending upon the beam diameter and the exposure time. The diameter of the dots was reduced to about 3.5 nm with the FE-STEM, while those were limited to about 15 nm in diameter with the FE-SEM. Self-standing structures were successfully fabricated.

Original languageEnglish
Pages (from-to)381-386
Number of pages6
JournalReviews on Advanced Materials Science
Volume5
Issue number4
Publication statusPublished - 2003 Dec
Externally publishedYes

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Nanocrystals
Electron beams
Metals
electron beams
Semiconductor materials
Fabrication
fabrication
Nanotechnology
metals
Nanowires
nanocrystals
Gases
Irradiation
Thin films
Scanning electron microscopy
nanofabrication
nanowires
scanning electron microscopy
irradiation
thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science (miscellaneous)

Cite this

Position and size controlled fabrication of nano-metals and -semiconductors with fine focused electron beam. / Furuya, Kazuo; Mitsuishi, Kazutaka; Shimojo, Masayuki; Takeguchi, Masaki.

In: Reviews on Advanced Materials Science, Vol. 5, No. 4, 12.2003, p. 381-386.

Research output: Contribution to journalArticle

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