Original language | English |
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Pages (from-to) | 534-535 |
Journal | Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM) |
Publication status | Published - 2004 Sept 1 |
Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors
M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi
Research output: Contribution to journal › Article › peer-review