Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)534-535
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

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