Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

M. Sasagawa, K. Kita, K. Kyuno, A. Toriumi

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)534-535
JournalExtended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2004 Sep 1

Cite this

@article{78335ee8941344bb8d97beb860f1c788,
title = "Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors",
author = "M. Sasagawa and K. Kita and K. Kyuno and A. Toriumi",
year = "2004",
month = "9",
day = "1",
language = "English",
pages = "534--535",
journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",

}

TY - JOUR

T1 - Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors

AU - Sasagawa, M.

AU - Kita, K.

AU - Kyuno, K.

AU - Toriumi, A.

PY - 2004/9/1

Y1 - 2004/9/1

M3 - Article

SP - 534

EP - 535

JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

JF - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)

ER -