| Original language | English |
|---|---|
| Pages (from-to) | 534-535 |
| Journal | Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM) |
| Publication status | Published - 2004 Sep 1 |
Cite this
Sasagawa, M., Kita, K., Kyuno, K., & Toriumi, A. (2004). Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors. Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), 534-535.
Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors. / Sasagawa, M.; Kita, K.; Kyuno, K.; Toriumi, A.
In: Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), 01.09.2004, p. 534-535.Research output: Contribution to journal › Article
Sasagawa, M, Kita, K, Kyuno, K & Toriumi, A 2004, 'Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors', Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM), pp. 534-535.
Sasagawa M, Kita K, Kyuno K, Toriumi A. Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors. Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM). 2004 Sep 1;534-535.
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title = "Post-Deposition Annealing Effects on Interface States Generation in HfO2/SiO2/Si MOS Capacitors",
author = "M. Sasagawa and K. Kita and K. Kyuno and A. Toriumi",
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language = "English",
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journal = "Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)",
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AU - Sasagawa, M.
AU - Kita, K.
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AU - Toriumi, A.
PY - 2004/9/1
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M3 - Article
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JO - Extended Abstracts of 2004 International Conference on Solid State Devices and Materials (SSDM)
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