Power Optimization Methodology for Ultralow Power Microcontroller with Silicon on Thin BOX MOSFET

Hayate Okuhara, Yu Fujita, Kimiyoshi Usami, Hideharu Amano

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this brief, a practical power optimization method that calculates the optimal power supply and body bias voltages, for a given target operational frequency and a temperature, is proposed and evaluated. The proposed optimization method is based upon a simple power model in which several coefficients for leakage power, switching power, temperature, and operational frequency are obtained from accurate real chip measurements. The calculated optimal-voltage settings by the proposed model can achieve minimum accuracies of 93.8%, 91.6%, and 79.5% for room-temperature, 50 °C, and 65 °C, respectively. Since the proposed methodology is based on well-known power formulas, it can be applied to the latest FD-SOI technologies.

Original languageEnglish
Article number7802624
Pages (from-to)1578-1582
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume25
Issue number4
DOIs
Publication statusPublished - 2017 Apr

Keywords

  • Body bias control
  • FD-SOI
  • Silicon on thin BOX (SOTB)
  • power optimization
  • ultralow power design

ASJC Scopus subject areas

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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