Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V t) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSI x-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (V t = -0.65 V).

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
Pages846-849
Number of pages4
DOIs
Publication statusPublished - 1988 Dec
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

Other

OtherTechnical Digest - International Electron Devices Meeting 1988
CitySan Francisco, CA, USA
Period88/12/1188/12/14

Fingerprint

Field effect transistors
Transconductance
Substrates
Threshold voltage
Crystal orientation
Tensors
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ueno, K., Hida, H., Ogawa, Y., Tsukada, Y., & Nozaki, T. (1988). Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 846-849) https://doi.org/10.1109/IEDM.1988.32943

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. / Ueno, Kazuyoshi; Hida, Hikaru; Ogawa, Yumi; Tsukada, Yasutoshi; Nozaki, Tadatoshi.

Technical Digest - International Electron Devices Meeting. ed. / Anon. 1988. p. 846-849.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueno, K, Hida, H, Ogawa, Y, Tsukada, Y & Nozaki, T 1988, Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. in Anon (ed.), Technical Digest - International Electron Devices Meeting. pp. 846-849, Technical Digest - International Electron Devices Meeting 1988, San Francisco, CA, USA, 88/12/11. https://doi.org/10.1109/IEDM.1988.32943
Ueno K, Hida H, Ogawa Y, Tsukada Y, Nozaki T. Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. In Anon, editor, Technical Digest - International Electron Devices Meeting. 1988. p. 846-849 https://doi.org/10.1109/IEDM.1988.32943
Ueno, Kazuyoshi ; Hida, Hikaru ; Ogawa, Yumi ; Tsukada, Yasutoshi ; Nozaki, Tadatoshi. / Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates. Technical Digest - International Electron Devices Meeting. editor / Anon. 1988. pp. 846-849
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