Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates

K.Ueno K.Ueno, H.Hida H.Hida, Y.Ogawa Y.Ogawa, Y.Tsukada Y.Tsukada, T.Nozaki T.Nozaki, Kazuyoshi Ueno

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)846-849
Journal1988 IEDM Technical Digest
Publication statusPublished - 1988 Dec 1

Cite this

K.Ueno, K. U., H.Hida, H. H., Y.Ogawa, Y. O., Y.Tsukada, Y. T., T.Nozaki, T. N., & Ueno, K. (1988). Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates. 1988 IEDM Technical Digest, 846-849.

Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates. / K.Ueno, K.Ueno; H.Hida, H.Hida; Y.Ogawa, Y.Ogawa; Y.Tsukada, Y.Tsukada; T.Nozaki, T.Nozaki; Ueno, Kazuyoshi.

In: 1988 IEDM Technical Digest, 01.12.1988, p. 846-849.

Research output: Contribution to journalArticle

K.Ueno, KU, H.Hida, HH, Y.Ogawa, YO, Y.Tsukada, YT, T.Nozaki, TN & Ueno, K 1988, 'Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates', 1988 IEDM Technical Digest, pp. 846-849.
K.Ueno, K.Ueno ; H.Hida, H.Hida ; Y.Ogawa, Y.Ogawa ; Y.Tsukada, Y.Tsukada ; T.Nozaki, T.Nozaki ; Ueno, Kazuyoshi. / Prediction and verification of no gate orientation effects for GaAs MESFETs in (111) substrates. In: 1988 IEDM Technical Digest. 1988 ; pp. 846-849.
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