Preparation and Characterization of a New Ge-Sb-Te Thin Film

Tomohiro Suzuki, Takahiro Ishizaki, Satoru Mori, Akio Fuwa

Research output: Contribution to journalArticle

Abstract

Ge10Sb67.5Te22.5 thin films were prepared by RF magnetron sputtering from a single high purity Ge10Sb 67.5Te22.5 target under the following condition: RF power: 30 W, Ar pressure: 1.067 Pa, Ar flow: 9 ccm, substrate temperature: room temperature (water cooling), distance between target and substrate: 7 cm, and sputtering time: 10∼40 min. Although the as-deposited film was amorphous, annealing for 30 min at 573 K allowed it to be crystallized. The crystallization temperature and the activation energy of Ge10Sb 67.5Te22.5 thin film were around 463 K and 2.50 eV, respectively, while those of Ge2Sb2Te5 thin film, prepared under the same conditions as stated above, were around 408 K and 2.04 eV, respectively. The difference of optical constants between crystalline and amorphous phases of Ge10Sb67.5Te22.5 and Ge2Sb2Te5 thin films were -0.9 + i0.93 and -0.77 + i0.67, respectively, in a blue laser area, i.e., wavelength 405 nm.

Original languageEnglish
Pages (from-to)90-93
Number of pages4
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume68
Issue number2
DOIs
Publication statusPublished - 2004 Feb

Keywords

  • Activation energy
  • Germanium-antimony- tellurium
  • Optical constant
  • Phase change optical disk
  • Sputtering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

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