Preparation and characterization of ferroelectric Bi4Ti3O12 thin films grown on (100)-oriented silicon wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

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Abstract

Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.

Original languageEnglish
Pages (from-to)4984-4986
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 SUPPL. B
Publication statusPublished - 1996 Sep 1

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Keywords

  • Bismuth titanate
  • Ferroelectric thin film
  • High c-axis orientation
  • Silicon
  • Sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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