Preparation and characterization of ferroelectric Bi4Ti3O12 thin films grown on (100)-oriented silicon wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.

Original languageEnglish
Pages (from-to)4984-4986
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number9 SUPPL. B
Publication statusPublished - 1996 Sep

Fingerprint

Ferroelectric thin films
Silicon wafers
wafers
Thin films
preparation
Remanence
silicon
Substrates
thin films
Deposition rates
Bismuth
Magnetron sputtering
bismuth
Ferroelectric materials
magnetron sputtering
ceramics
Silicon
polarization

Keywords

  • Bismuth titanate
  • Ferroelectric thin film
  • High c-axis orientation
  • Silicon
  • Sputtering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

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abstract = "Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.",
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T1 - Preparation and characterization of ferroelectric Bi4Ti3O12 thin films grown on (100)-oriented silicon wafers

AU - Yamaguchi, Masaki

AU - Nagatomo, Takao

AU - Omoto, Osamu

PY - 1996/9

Y1 - 1996/9

N2 - Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.

AB - Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.

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KW - Silicon

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