Abstract
With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.
| Original language | English |
|---|---|
| Pages (from-to) | 87-92 |
| Number of pages | 6 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 332 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2003 Dec 15 |
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ASJC Scopus subject areas
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials
Cite this
Preparation and properties of anti-reflection/anti-static thin films formed on organic film by photo-assisted sol-gel method. / Ohishi, Tomoji.
In: Journal of Non-Crystalline Solids, Vol. 332, No. 1-3, 15.12.2003, p. 87-92.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Preparation and properties of anti-reflection/anti-static thin films formed on organic film by photo-assisted sol-gel method
AU - Ohishi, Tomoji
PY - 2003/12/15
Y1 - 2003/12/15
N2 - With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.
AB - With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.
UR - http://www.scopus.com/inward/record.url?scp=0242663645&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242663645&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2003.09.019
DO - 10.1016/j.jnoncrysol.2003.09.019
M3 - Article
VL - 332
SP - 87
EP - 92
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
IS - 1-3
ER -