Preparation and properties of anti-reflection/anti-static thin films formed on organic film by photo-assisted sol-gel method

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.

Original languageEnglish
Pages (from-to)87-92
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume332
Issue number1-3
DOIs
Publication statusPublished - 2003 Dec 15

Fingerprint

Sol-gel process
gels
Thin films
preparation
thin films
Surface resistance
thermal resistance
ITO (semiconductors)
Heat resistance
Electron microscopes
electron microscopes
reflectance

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

@article{80ae9124e64742fb88828fe241a2a145,
title = "Preparation and properties of anti-reflection/anti-static thin films formed on organic film by photo-assisted sol-gel method",
abstract = "With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35{\%} (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.",
author = "Tomoji Ohishi",
year = "2003",
month = "12",
day = "15",
doi = "10.1016/j.jnoncrysol.2003.09.019",
language = "English",
volume = "332",
pages = "87--92",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Preparation and properties of anti-reflection/anti-static thin films formed on organic film by photo-assisted sol-gel method

AU - Ohishi, Tomoji

PY - 2003/12/15

Y1 - 2003/12/15

N2 - With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.

AB - With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.

UR - http://www.scopus.com/inward/record.url?scp=0242663645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242663645&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2003.09.019

DO - 10.1016/j.jnoncrysol.2003.09.019

M3 - Article

VL - 332

SP - 87

EP - 92

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1-3

ER -