Abstract
With the objective of developing films for advanced systems, a photo-assisted sol-gel method has been used to form an anti-reflection/anti-static thin film on an organic film (PET) that has no heat-resistance, and the properties of the film have been evaluated. This method makes it possible to form a layered ITO/SiO2 structure on the film at 60 °C, which is a good condition for such film formation. This film has a surface resistance of 2.0 × 106 Ω/□ and a surface reflectivity of 0.35% (at 574 nm), which are good anti-reflection and anti-static properties for a thin film. Observation of the cross-sectional structure of the film by transmission electron microscope (TEM) reveals that the layer formed on the film is both flat and uniform.
| Original language | English |
|---|---|
| Pages (from-to) | 87-92 |
| Number of pages | 6 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 332 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2003 Dec 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry