Preparation and properties of Bi2SiO5/Si structures

Masaki Yamaguchi, Kouji Hiraki, Takao Nagatomo, Yoichiro Masuda

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Bismuth silicate (Bi2SiO5) films, expected as the intermediate buffer layer between the bismuth layer-structured ferroelectrics (BLSF) and silicon substrate were prepared on (100)-oriented silicon wafers by rf magnetron sputtering. The c-axis-oriented Bi2SiO5 films with smooth surface morphology were obtained at the substrate temperature of 400°C. The leakage current density is on the order of 10-10 A·cm-2, under the applied electric field of less than 350 kV·cm-1. From capacitance-voltage characteristics measurement results, it is worth noting that hysteresis is hardly observed. The interface trap density at the midgap is estimated to be approximately 6 × 1012 cm-2·eV-1. The numerical evaluation results indicate that the metal-ferroelectric-insulator-semiconductor (MFIS) capacitor can be reversed at a low applied voltage. This suggests that Bi4Ti3O12/Bi2SiO5/Si structures are suitable for application for ferroelectric memory devices.

Original languageEnglish
Pages (from-to)5512-5516
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number9 B
Publication statusPublished - 2000 Sep

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bismuth
Ferroelectric materials
Bismuth
preparation
capacitance-voltage characteristics
silicon
low voltage
silicates
capacitors
magnetron sputtering
leakage
buffers
hysteresis
insulators
traps
Electric potential
wafers
Substrates
Buffer layers
current density

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Preparation and properties of Bi2SiO5/Si structures. / Yamaguchi, Masaki; Hiraki, Kouji; Nagatomo, Takao; Masuda, Yoichiro.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 9 B, 09.2000, p. 5512-5516.

Research output: Contribution to journalArticle

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