Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures

Masaki Yamaguchi, Takao Nagatomo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.

Original languageEnglish
Pages (from-to)294-298
Number of pages5
JournalThin Solid Films
Volume348
Issue number1
DOIs
Publication statusPublished - 1999 Jul 6

Fingerprint

Thin films
preparation
Remanence
Silicon
Substrates
Buffer layers
thin films
buffers
Ferroelectricity
Ferroelectric thin films
Temperature
temperature
ferroelectricity
frequency measurement
silicon
polarization
Hysteresis loops
Bismuth
Magnetron sputtering
bismuth

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures. / Yamaguchi, Masaki; Nagatomo, Takao.

In: Thin Solid Films, Vol. 348, No. 1, 06.07.1999, p. 294-298.

Research output: Contribution to journalArticle

@article{bc3c19a010724469a79f9e36483e6562,
title = "Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures",
abstract = "Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40{\%} of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.",
author = "Masaki Yamaguchi and Takao Nagatomo",
year = "1999",
month = "7",
day = "6",
doi = "10.1016/S0040-6090(99)00025-5",
language = "English",
volume = "348",
pages = "294--298",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures

AU - Yamaguchi, Masaki

AU - Nagatomo, Takao

PY - 1999/7/6

Y1 - 1999/7/6

N2 - Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.

AB - Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.

UR - http://www.scopus.com/inward/record.url?scp=0032635683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032635683&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00025-5

DO - 10.1016/S0040-6090(99)00025-5

M3 - Article

VL - 348

SP - 294

EP - 298

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -