Abstract
Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.
| Original language | English |
|---|---|
| Pages (from-to) | 294-298 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 348 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1999 Jul 6 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures. / Yamaguchi, Masaki; Nagatomo, Takao.
In: Thin Solid Films, Vol. 348, No. 1, 06.07.1999, p. 294-298.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures
AU - Yamaguchi, Masaki
AU - Nagatomo, Takao
PY - 1999/7/6
Y1 - 1999/7/6
N2 - Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.
AB - Bismuth titanate (Bi4Ti3O12) thin films were deposited on a (100) silicon substrate at a substrate temperature of 500°C, using rf magnetron sputtering. Ferroelectric Bi4Ti3O12 thin films were deposited on the pyrochlore phase buffer layer. The pyrochlore phase buffer layer was effective for lowering substrate temperature and suppressed the growth of the plate-like grains. The apparent remanent polarization and the apparent coercive field of this film at the measurement frequency of 50 Hz were estimated to be 2.4 μC cm-2 and 2.3 kV cm-1, respectively. The apparent remanent polarization was degraded to approximately 40% of the initial value by 1 × 106 switching cycles. The capacitance-voltage hysteresis loop of Bi4Ti3O12 thin film on silicon substrate is observed to correspond to ferroelectricity.
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U2 - 10.1016/S0040-6090(99)00025-5
DO - 10.1016/S0040-6090(99)00025-5
M3 - Article
VL - 348
SP - 294
EP - 298
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -