Preparation and properties of tantalum oxide films by sol-gel method

Tomoji Ohishi, Tetsuo Nakazawa, Akira Katou

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The preparation of tantalum oxide thin film by the sol-gel method is discussed. The conditions of the film growth are investigated carefully to avoid pinholes and cracks. In particular, the effect of hydrochloric acid added to the sol solution is clarified. It was found by TEM observation that the rapid degradation of the breakdown voltage was due to pinholes created during crystallization process.

Original languageEnglish
Pages (from-to)50-59
Number of pages10
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume76
Issue number9
Publication statusPublished - 1993 Sep
Externally publishedYes

Fingerprint

Tantalum oxides
tantalum oxides
pinholes
Film growth
Hydrochloric acid
Sols
Electric breakdown
Sol-gel process
Oxide films
oxide films
Crystallization
gels
Transmission electron microscopy
Cracks
Degradation
Thin films
preparation
hydrochloric acid
electrical faults
cracks

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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abstract = "The preparation of tantalum oxide thin film by the sol-gel method is discussed. The conditions of the film growth are investigated carefully to avoid pinholes and cracks. In particular, the effect of hydrochloric acid added to the sol solution is clarified. It was found by TEM observation that the rapid degradation of the breakdown voltage was due to pinholes created during crystallization process.",
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