Preparation and wear resistance of TiBC, TiBN, SiNx single layer film and TiBC-SiNx and TiBN-SiNx double layer film by thermal plasma CVD

Yusuke Fuji, Shiro Shimada, Hajime Kiyono

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

Original languageEnglish
Pages (from-to)287-293
Number of pages7
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume54
Issue number4
DOIs
Publication statusPublished - 2007 Apr
Externally publishedYes

Fingerprint

Plasma Gases
Plasma CVD
Wear resistance
Chemical vapor deposition
Borates
Titanium
Hot Temperature
Energy dispersive spectroscopy
X ray photoelectron spectroscopy
Crystalline materials
Plasmas
Thin films
Scanning electron microscopy
Substrates

Keywords

  • Alkoxide solution
  • Plasma-enhanced chemical vapor deposition
  • Wear resistance

ASJC Scopus subject areas

  • Mechanical Engineering
  • Metals and Alloys

Cite this

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title = "Preparation and wear resistance of TiBC, TiBN, SiNx single layer film and TiBC-SiNx and TiBN-SiNx double layer film by thermal plasma CVD",
abstract = "Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.",
keywords = "Alkoxide solution, Plasma-enhanced chemical vapor deposition, Wear resistance",
author = "Yusuke Fuji and Shiro Shimada and Hajime Kiyono",
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AU - Shimada, Shiro

AU - Kiyono, Hajime

PY - 2007/4

Y1 - 2007/4

N2 - Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

AB - Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

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